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| ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET GENERAL DESCRIPTION The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of an ALD1116 N-channel MOSFET pair and an ALD1117 P-channel MOSFET pair in one package. The ALD1105 is a low drain current, low leakage current version of the ALD1103. The ALD1105 offers high input impedance and negative current temperature coefficient. The transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for precision signal switching and amplifying applications in +1V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When used in complementary pairs, a dual CMOS analog switch can be constructed. In addition, the ALD1105 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications. The ALD1105 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the field effect transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature. For example, DC beta of the device at a drain current of 3mA at 25C is = 3mA/30pA = 100,000,000. FEATURES * Thermal tracking between N-channel and P-channel pairs * Low threshold voltage of 0.7V for both N-channel & P-channel MOSFETs * Low input capacitance * Low Vos -- 10mV * High input impedance -- 1013 typical * Low input and output leakage currents * Negative current (IDS) temperature coefficient * Enhancement mode (normally off) * DC current gain 109 * Matched N-channel pair and matched P-channel pair in one package APPLICATIONS * * * * * * * * * * Precision current mirrors Complementary push-pull linear drives Discrete Analog switches Analog signal Choppers Differential amplifier input stage Voltage comparator Data converters Sample and Hold Analog current inverter Precision matched current sources PIN CONFIGURATION DN1 GN1 SN1 VDP1 GP1 SP1 1 2 3 4 5 6 7 DB, PB, SB PACKAGE 14 13 12 11 10 9 8 DN2 GN2 SN2 V+ DP2 GP2 SP2 BLOCK DIAGRAM N GATE 1 (2) N DRAIN 1 (1) N SOURCE 1 (3) SUBSTRATE (4) N DRAIN 2 (14) N SOURCE 2 (12) N GATE 2 (13) ORDERING INFORMATION Operating Temperature Range* -55C to +125C 0C to +70C 0C to +70C 14-Pin CERDIP Package ALD1105 DB 14-Pin Plastic Dip Package ALD1105 PB 14-Pin SOIC Package ALD1105 SB P GATE 1 (6) P DRAIN 1 (5) P SOURCE 1 (7) SUBSTRATE (11) P DRAIN 2 (10) P SOURCE 2 (8) * Contact factory for industrial temperature range. P GATE 2 (9) (c) 2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS Gate-source voltage, VGS Power dissipation Operating temperature range Storage temperature range Lead temperature, 10 seconds 13.2V 13.2V 500 mW 0C to +70C -55C to +125C -65C to +150C +260C PB, SB package DB package OPERATING ELECTRICAL CHARACTERISTICS TA = 25C unless otherwise specified N - Channel Parameter Symbol Min Typ Max Gate Threshold VT 0.4 0.7 1.0 Voltage Offset Voltage VGS1 - VGS2 VOS 2 10 Unit V Test Conditions IDS = 1A VGS = VDS IDS = 10A VGS = VDS P - Channel Min Typ Max -0.4 -0.7 -1.0 Unit V Test Conditions IDS = -1A VGS = VDS IDS = -10A VGS = VDS mV 2 10 mV Gate Threshold Temperature TCVT Drift On Drain Current Trans-. conductance Mismatch Output Conductance Drain Source ON Resistance IDS (ON) Gfs Gfs GOS RDS(ON) 3 -1.2 mV/C -1.3 mV/C 4.8 mA VGS = VDS = 5V VDS = 5V IDS= 10mA -1.3 -2 mA VGS = VDS = -5V VDS = -5V IDS= -10mA 1 1.8 mmho 0.25 0.67 mmho 0.5 200 % mho VDS = 5V IDS = 10mA VDS = 0.1V VGS = 5V 0.5 40 % mho VDS = -5V IDS = -10mA VDS = -0.1V VGS = -5V 350 500 1200 1800 Drain Source ON Resistance RDS(ON) Mismatch Drain Source Breakdown Voltage Off Drain Current Gate Leakage Current Input Capacitance 0.5 % VDS = 0.1V VGS = 5V 0.5 % VDS = -0.1V VGS = -5V BVDSS IDS(OFF) IGSS CISS 12 V IDS = 1A VGS =0V VDS =12V IGS = 0V TA = 125C VDS = 0V VGS =12V TA = 125C -12 V IDS = -1A VGS =0V VDS = -12V VGS = 0V TA = 125C VDS = 0V VGS =-12V TA = 125C 10 400 4 30 1 3 pA nA pA nA pF 10 400 4 30 1 3 pA nA pA nA pF 0.1 1 1 1 ALD1105 Advanced Linear Devices 2 P- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS 500 LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN SOURCE CURRENT (A) VBS = 0V TA = 25C VGS = -12V -6V -4V -2V DRAIN SOURCE CURRENT (mA) -10 -7.5 VBS = 0V TA = 25C VGS = -12V -10V -8V -6V 250 0 -5.0 -250 -2.5 -4V -2V 0 0 -2 -4 -6 -8 -10 -12 DRAIN SOURCE VOLTAGE (V) -500 -320 -160 0 160 320 DRAIN SOURCE VOLTAGE (mV) FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE FORWARD TRANSCONDUCTANCE (mmho) 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0 -2 -4 -6 -8 -10 -12 TA = +25C IDS = -1mA TA = +125C -20 TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS DRAIN SOURCE CURRENT (A) VBS = 0V -15 2V 4V 6V 8V 10V 12V VBS = 0V f = 1KHz IDS = -5mA -10 -5 VGS = VDS TA = 25C 0 0 -0.8 -1.6 -2.4 -3.2 -4.0 DRAIN SOURCE VOLTAGE (V) GATE SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE RDS (ON) vs. GATE SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE (K) 100 VDS = 0.4V VBS = 0V 10 TA = +125C OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE OFF DRAIN SOURCE CURRENT (pA) 1000 VDS = -12V VGS = VBS = 0V 100 1 TA = +25C 0.1 0 -2 -4 -6 -8 -10 -12 10 1 -50 -25 0 +25 +50 +75 +100 +125 GATE SOURCE VOLTAGE (V) AMBIENT TEMPERATURE (C) ALD1105 Advanced Linear Devices 3 N- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS 1000 DRAIN SOURCE CURRENT (mA) LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN SOURCE CURRENT (A) 20 VBS = 0V TA = 25C VGS = 12V 10V 8V VBS = 0V TA = 25C 500 VGS = 12V 6V 4V 2V 15 0 10 6V 4V 2V -500 5 0 0 2 4 6 8 10 12 -1000 -160 -80 0 80 160 DRAIN SOURCE VOLTAGE (V) DRAIN SOURCE VOLTAGE (mV) FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE 20 TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS 20 FORWARD TRANSCONDUCTANCE (mmho) 10 5 IDS = 10mA TA = +25C DRAIN SOURCE CURRENT (A) VBS = 0V f = 1KHz VGS = VDS TA = 25C 15 VBS = 0V 10 -2V -4V -6V -8V -10V 5 -12V TA = +125C 2 1 0.5 0.2 0 2 4 IDS = 1mA 6 8 10 12 0 0 0.8 1.6 2.4 3.2 4.0 DRAIN SOURCE VOLTAGE (V) GATE SOURCE VOLTAGE (V) DRAIN SOURCE ON RESISTANCE RDS (ON) vs. GATE SOURCE VOLTAGE DRAIN SOURCE ON RESISTANCE (K) 100 OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE OFF DRAIN SOURCE CURRENT (pA) 1000 VDS = +12V VGS = VBS = 0V 100 VDS = 0.2V VBS = 0V 10 TA = +125C 1 10 0.1 0 TA = +25C 2 4 6 8 10 12 1 -50 -25 0 +25 +50 +75 +100 +125 GATE SOURCE VOLTAGE (V) AMBIENT TEMPERATURE (C) ALD1105 Advanced Linear Devices 4 TYPICAL APPLICATIONS CURRENT SOURCE MIRROR V+ = +5V CURRENT SOURCE WITH GATE CONTROL V+ = +5V V+ = +5V Q3 Q4 Q3 Q4 ISET RSET I SOURCE ISET Digital Logic Control of Current Source RSET ISOURCE Q1 Q2 Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET I SOURCE = ISET = V+ -Vt RSET ~ = 4 RSET ON Q1 OFF : N - Channel MOSFET Q1 Q3,Q4 : P - Channel MOSFET DIFFERENTIAL AMPLIFIER V+ CURRENT SOURCE MULTIPLICATION V+ = +5V PMOS PAIR Q3 Q4 VOUT ISET RSET ISOURCE = ISET x N VIN+ Q1 Q2 NMOS PAIR VIN- QSET Q1 Q2 Q3 QN ALD1105 Current Source Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET QSET, Q1..QN: ALD 1106 or ALD 1105 N - Channel MOSFET ALD1105 Advanced Linear Devices 5 TYPICAL APPLICATIONS BASIC CURRENT SOURCES N- CHANNEL CURRENT SOURCE P- CHANNEL CURRENT SOURCE V+ = +5V ISET ISOURCE RSET V+ = +5V 1/2 ALD1105 Q2 Q1 Q3 Q4 I SOURCE 1/2 ALD1105 ISET RSET ISOURCE = ISET = V+ - Vt RSET ~ ~ V+ - 1.0 = = RSET 4 RSET Q3, Q4: P - Channel MOSFET Q1, Q2 : N - Channel MOSFET CASCODE CURRENT SOURCES V+ = +5V V+ = +5V ISET ISOURCE Q4 RSET Q1 Q3 Q3 Q4 Q2 Q2 Q1 ISET RSET ISOURCE ISOURCE = ISET = V+ - 2Vt RSET ~ = 3 RSET Q1, Q2, Q3, Q4: N - Channel MOSFET (1/2 ALD1105 + ALD1116) Q1, Q2, Q3, Q4: P - Channel MOSFET (1/2 ALD1105 + ALD1117) ALD1105 Advanced Linear Devices 6 |
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